Optoelectronic properties of In2S3 thin films measured using surface photovoltage spectroscopy
نویسندگان
چکیده
منابع مشابه
architecture and engineering of nanoscale sculptured thin films and determination of their properties
چکیده ندارد.
15 صفحه اولOptoelectronic Properties of ZnSe, ITO, TiO2 and ZnO Thin Films
Zinc selenide (ZnSe) a II-VI compound semiconductor with cubic zinc blende structure and a direct bandgap of 2.7 eV is found to be a very promising material for optoelectronic devices (Venkatachalam et al., 2007a). Semiconductor heterostructures employing zinc selenide and related alloys are an option for the production of optoelectronic devices emitting in the blue – green spectral range (Haas...
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ژورنال
عنوان ژورنال: Materials Research Express
سال: 2019
ISSN: 2053-1591
DOI: 10.1088/2053-1591/ab143b